Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

Autor:	Henrik Pedersen, Pamburayi Mpofu, Urban Forsberg, Nathan J. O’Brien, Polla Rouf
Rok vydání:	2022
Předmět:	Oorganisk kemi Materials science Oxide Analytical chemistry chemistry.chemical_element Inorganic Chemistry Atomic layer deposition chemistry.chemical_compound chemistry Electrical resistivity and conductivity Impurity Transmittance Deposition (phase transition) Thin film Indium
Zdroj:	Dalton Transactions. 51:4712-4719
ISSN:	1477-9234 1477-9226
Popis:	Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(iii) triazenide precursor and H2O. A temperature interval with self-limiting growth was found between similar to 270 and 385 degrees C with a growth per cycle of similar to 1.0 angstrom. The deposited films were polycrystalline cubic In2O3 with In : O ratios of 1 : 1.2, and low levels of C and no detectable N impurities. The transmittance of the films was found to be >70% in visible light and the resistivity was found to be 0.2 m omega cm. The high growth rates, low impurities, high optical transmittance, and low resistivity of these films give promise to this process being used for ALD of In2O3 films for future microelectronic displays. Funding Agencies|Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [SSF-RMA 15-0018]; Swedish Institute
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22160c189b4bac61f0ffb69bb9a53332 https://doi.org/10.1039/d1dt03748j Zobrazit plný text záznamu