Mechanism of Sensitivity Enhancement of a ZnO Nanofilm Gas Sensor by UV Light Illumination
| Autor: | Zhe Sun, Qi Xu, Dongyi Zhang, Leixin Meng, Yong Qin, Gaoda Li |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Fluid Flow and Transfer Processes
Materials science business.industry Process Chemistry and Technology 010401 analytical chemistry Bioengineering 02 engineering and technology 021001 nanoscience & nanotechnology medicine.disease_cause 01 natural sciences 0104 chemical sciences Adsorption Semiconductor medicine Optoelectronics Sensitivity (control systems) 0210 nano-technology business Instrumentation Ultraviolet Mechanism (sociology) |
| Zdroj: | ACS sensors. |
| ISSN: | 2379-3694 |
| Popis: | Although ultraviolet (UV) light illumination has been widely used to increase the sensitivity of semiconductor gas sensors, its underlying mechanism is still blurred and controversial. In this work, the influence of UV light illumination on the sensitivity of ZnO nanofilm gas sensors is explored experimentally and simulated based on a modified Wolkenstein's model. The influential factors on sensitivity are determined respectively: the surface band bending and Fermi level are measured by Kelvin probe force microscopy, the binding energy and extrinsic surface state are calculated by density functional theory, and the depletion of the whole semiconductor caused by the finite size is illustrated by the transfer characteristics of a field effect transistor. With all these factors taken into consideration, the surface state densities of adsorbed O |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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