Growth of monolayer graphene on 8 degrees off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
| Autor: | Wilfried Desrat, Nicolas Camara, Narcis Mestres, Phillippe Godignon, C. Consejo, Jean Camassel, Benoit Jouault, A. Caboni, E. Pausas, B. Jabakhanji |
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| Přispěvatelé: | Groupe d'étude des semiconducteurs (GES), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2) |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Electron mobility
Materials science Fullerene Physics and Astronomy (miscellaneous) FOS: Physical sciences 02 engineering and technology Quantum Hall effect 01 natural sciences law.invention symbols.namesake law 0103 physical sciences Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Graphite 010306 general physics EPITAXIAL GRAPHENE Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Graphene Doping Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology symbols [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2010, 97, pp.093107. ⟨10.1063/1.3480610⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.3480610⟩ |
| Popis: | Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry. Comment: 11 pages, 4 figures , Submitted in APL |
| Databáze: | OpenAIRE |
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