Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates
| Autor: | Nils Nordell, Margareta K. Linnarsson, T Schmitt, K. Rottner, Adolf Schöner, Susanne Karlsson |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Dopant Mechanical Engineering Analytical chemistry Condensed Matter Physics Epitaxy Secondary ion mass spectrometry chemistry.chemical_compound Van der Pauw method chemistry Mechanics of Materials Hall effect Silicon carbide General Materials Science Ionization energy Layer (electronics) |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(98)00540-6 |
| Popis: | Nitrogen- and aluminum-doped 4H silicon carbide epitaxial layers were grown simultaneously on semi-insulating and conducting substrates. The layers were investigated by conventional van der Pauw Hall effect measurements and for comparison also with secondary ion mass spectrometry and capacitance voltage measurements. It was found, that the carrier concentration in the layers grown on conducting substrates were overestimated by the Hall effect measurement, which leads to an underestimation of the ionization energy of the main dopant, as compared to the layer grown on semi-insulating substrates. The difference can be explained by a two-layer Hall effect model. |
| Databáze: | OpenAIRE |
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