Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier
| Autor: | Jerome Boch, Nicolas Roche, Fabien Roig, P. Ribeiro, B. Azais, Laurent Dusseau, Robert Ecoffet, P. Calvel, G. Auriel, R. Marec, J.-R. Vaille, Francoise Bezerra, A. Privat, Frédéric Saigné |
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| Přispěvatelé: | Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), Université de Montpellier (UM), Thales Alenia Space (TAS), THALES, Centre National d'Études Spatiales [Toulouse] (CNES) |
| Rok vydání: | 2014 |
| Předmět: |
Nuclear and High Energy Physics
010308 nuclear & particles physics Computer science Amplifier 020208 electrical & electronic engineering Bipolar junction transistor 02 engineering and technology Integrated circuit 01 natural sciences [SPI.TRON]Engineering Sciences [physics]/Electronics law.invention Nuclear Energy and Engineering law Absorbed dose Transient radiation 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Operational amplifier Transient response Electronics Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS |
| Zdroj: | IEEE Transactions on Nuclear Science IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1603-1610. ⟨10.1109/TNS.2014.2306211⟩ |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed on the ATREE responsesfrom different manufacturers. The ATREEs are produced by pulsed X-ray experiments. ASET laser mappings are performed to highlight the sensitive bipolar transistors, explaining the ATREE phenomena variations from one manufacturer to another one. ATREE modeling results are presented using a previously developed simulation tool. A good agreement is observed between experimental ATREE responses and model outputs whatever the TID level, the prompt dose level, the amplifier configuration and the device manufacturer. |
| Databáze: | OpenAIRE |
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