Simulation Study of an Insulated Gate Bipolar Transistor With Pinched-Off N-Type Pillar

Autor:	Jun Wang, Jiang Mengxuan, Zheng John Shen, Xin Yin, Zhikang Shuai
Rok vydání:	2016
Předmět:	Breakdown Voltage Engineering 02 engineering and technology IGBT 01 natural sciences Safe operating area 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Gate driver Electrical and Electronic Engineering 010302 applied physics Gate turn-off thyristor business.industry 020208 electrical & electronic engineering Electrical engineering Insulated-gate bipolar transistor Avalanche Energy Converters Reliability Electronic Optical and Magnetic Materials Threshold voltage Current injection technique Forward Voltage Drop Optoelectronics Field-effect transistor lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:TK1-9971 Biotechnology
Zdroj:	IEEE Journal of the Electron Devices Society, Vol 4, Iss 3, Pp 144-148 (2016)
ISSN:	2168-6734
Popis:	This paper proposes a novel field-stop insulated gate bipolar transistor with an N-type pillar (NP-IGBT) formed on the silicon backside, which acts as a field-stop layer to pinch off electric field in the n-drift region under forward-blocking mode. TCAD simulation indicates that the proposed IGBT offers an avalanche energy 32% and reverse-biased safe operating area 20% higher than a conventional field-stop IGBT. Therefore, the proposed IGBT provides more reliable electrical performance for high-power converters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21bae3c45991ff68d8b1126cc5a62d48 https://doi.org/10.1109/jeds.2016.2537828 Zobrazit plný text záznamu