Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials
| Autor: | Kai Hu, Weixin Ouyang, Feng Teng, Xiaosheng Fang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Semiconductor materials Detector Photodetector Heterojunction 02 engineering and technology Photodetection Photoelectric effect 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Engineering physics 0104 chemical sciences Semiconductor Mechanics of Materials General Materials Science Inorganic materials 0210 nano-technology business |
| Zdroj: | Advanced materials (Deerfield Beach, Fla.). 30(35) |
| ISSN: | 1521-4095 |
| Popis: | Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text