Molecular beam epitaxy regrowth of pseudomorphic high electron mobility transistors using thin in layer
| Autor: | W.H. Lan, C.K. Peng, S. J. Yang, S.L. Tu, S.S. Chen |
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| Rok vydání: | 2005 |
| Předmět: |
Electron mobility
Materials science business.industry Transconductance Transistor Analytical chemistry Substrate (electronics) High-electron-mobility transistor Gallium arsenide law.invention chemistry.chemical_compound chemistry law Optoelectronics business Layer (electronics) Molecular beam epitaxy |
| Zdroj: | International Electron Devices and Materials Symposium. |
| DOI: | 10.1109/edms.1994.771303 |
| Popis: | We have demonstrated a molecular beam epitaxy (MBE) regrowth technique on GaAs Substrate using thin In-passivation layer. After the growth of buffer layers, the substrate temperature was lowered to deposit a thin In layer at about 50/spl deg/C, to ensure a uniform In coverage. These samples were then removed from the MBE system and left at atmosphere for weeks, before being reloaded back to MBE for the regrowth of a pseudomorphic high electron mobility transistor (PHEMT). Hall measurements indicated comparable results between the regrowth and reference samples. C -V depth profiling on the regrown PHEMT revealed no sign of residual charge-carriers at the interface. The regrown PHEMT with 1-um gate length has transconductance as high as 330 mS/mm and f/sub T/ of 23 GHz. These results indicate the In-regrowth may serve as a useful technique for obtaining complex circuits on the same chip. |
| Databáze: | OpenAIRE |
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