Residual stresses modelled by MD simulation applied to PVD DC sputter deposition
| Autor: | P. Klein, Thomas Frauenheim, B. Gottwald, A. Gemmler, Christof Köhler |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2005 |
| Předmět: |
Mesoscopic physics
Sputtertechnik Materials science Nucleation Sputtering Surfaces and Interfaces General Chemistry Substrate (electronics) coating technology Sputter deposition Condensed Matter Physics Molekulardynamik Surfaces Coatings and Films stress tensor Stress (mechanics) Residual stress Physical vapor deposition Materials Chemistry Composite material Layer (electronics) Physikalisches Aufdampfen PVD (Physical vapour deposition) |
| Zdroj: | Surface and Coatings Technology. 200:1600-1603 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2005.08.120 |
| Popis: | The molecular dynamic method was extended for use in deposition techniques, therefore the development of dynamic equations, boundary conditions and mesoscopic observable was necessary. By application of the Tight-binding method based on the density functional theory for molecular potential functions, it is possible to analyze and optimize the nucleation and layer growth mechanisms of elementary layer substrate systems. So far, we have deposited five copper atoms on a silicon (111) substrate surface. With a mesoscopic stress observable we have measured a residual tensile stress of − 650 MPa. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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