Microscopic analysis of the influence of solar cell process steps on the recombination activity of extended crystal defects
| Autor: | Zuschlag, A., Morhenn, H., Bernhard, J., Junge, J., Seren, S., Hahn, G. |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: | |
| ISSN: | 2433-2437 |
| Popis: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2433-2437 Gettering and passivation steps during solar cell processing influence the recombination activity of grain boundaries in silicon wafers. The purpose of this work is to study the influence of different solar cell processing steps on the recombination activity. Neighbouring wafers of intentionally contaminated multicrystalline ingots were differently processed to solar cells or treated with single POCl3-diffusion, hydrogenation or temperature steps. Therefore, the influence of these solar cell processing steps on recombination activity could be evaluated individually by electron beam induced current (EBIC) measurements. Afterwards these wafers were investigated by electron backscatter diffraction (EBSD) measurements to determine the crystal orientations and the crystallographic properties of the grain boundaries. Combined EBIC and EBSD results allow the evaluation of the influence of solar cell processing steps on recombination activity in dependence of several grain boundary types. The gained results might be important for defect engineering and the development of an optimized solar cell process on cost effective and impurity-rich silicon material to reduce the recombination activity at grain boundaries in multicrystalline silicon material. |
| Databáze: | OpenAIRE |
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