Breakthroughs in 3D Sequential technology
| Autor: | C. Scibetta, S. Beaurepaire, F. Fournel, A. Roman, S. Chevalliez, C. Fenouillet-Beranger, X. Garros, Xavier Federspiel, J. Aubin, V. Larrey, Perrine Batude, F. Kouemeni-Tchouake, F. Ponthenier, J-B. Pin, Daniel Scevola, Lucile Arnaud, F. Aussenac, C. Guerin, P. Acosta-Alba, V. Mazzocchi, Sebastien Kerdiles, H. Fontaine, Shay Reboh, P. Perreau, Sylvain Maitrejean, Laurent Brunet, N. Rambal, M. Vinet, Pascal Besson, Christophe Morales, T. Lardin, V. Balan, Vincent Jousseaume, D. Ney, F. Mazen, Francois Andrieu |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Order (ring theory) 02 engineering and technology Epitaxy 01 natural sciences Active devices 020202 computer hardware & architecture Design for manufacturability Reliability (semiconductor) CMOS Surface preparation 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer business |
| Zdroj: | 2018 IEEE International Electron Devices Meeting (IEDM) |
| DOI: | 10.1109/iedm.2018.8614653 |
| Popis: | The 3D sequential integration, of active devices requires to limit the thermal budget of top tier processing to low temperature (LT) (i.e. $\mathrm{T}_{\text{TOP}}=500^{\circ}\mathrm{C})$ in order to ensure the stability of the bottom devices. Here we present breakthrough in six areas that were previously considered as potential showstoppers for 3D sequential integration from either a manufacturability, reliability, performance or cost point of view. Our experimental data demonstrate the ability to obtain 1) low-resistance poly-Si gate for the top FETs, 2) Full LT RSD epitaxy including surface preparation, 3) Stability of intermediate BEOL between tiers (iBEOL) with standard ULK/Cu technology, 4) Stable bonding above ULK, 5) Efficient contamination containment for wafers with Cu/ULK iBEOL enabling their re-introduction in FEOL for top FET processing 6) Smart Cut™ process above a CMOS wafer. |
| Databáze: | OpenAIRE |
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