Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices
| Autor: | Fabio La Mattina, Ivo Utke, Paolo A. Losio, Stephan Buecheler, Ayodhya N. Tiwari, Patrick Reinhard, Stefan G. Haass, Martina Lingg, Romain Carron, Fabian Pianezzi, Benjamin Bissig, Shiro Nishiwaki, Carlos Guerra-Nuñez, Thomas Feurer, Enrico Avancini |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry Electron beam-induced current Heterojunction 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology 7. Clean energy 01 natural sciences Copper indium gallium selenide solar cells Cadmium telluride photovoltaics law.invention Biomaterials law 0103 physical sciences Solar cell Optoelectronics General Materials Science Charge carrier Quantum efficiency 0210 nano-technology business Biotechnology |
| Zdroj: | SMALL |
| ISSN: | 1613-6829 |
| Popis: | Quantum efficiency measurements of state of the art Cu(In,Ga)Se2 (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al2 O3 layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu2 (Zn,Sn)(S,Se)4 . |
| Databáze: | OpenAIRE |
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