CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors
| Autor: | Anita Lloyd Spetz, Lida Khajavizadeh, Mike Andersson |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
MISFET
Materials science business.industry sensing mechanism Oxide Co detection chemistry.chemical_element lcsh:A Oxygen gas sensor Metal CO chemistry.chemical_compound Semiconductor chemistry Catalytic metal visual_art visual_art.visual_art_medium Optoelectronics Field-effect transistor lcsh:General Works business |
| Zdroj: | Proceedings, Vol 56, Iss 41, p 41 (2020) |
| ISSN: | 2504-3900 |
| Popis: | In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices. |
| Databáze: | OpenAIRE |
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