High sensitivity Ge-on-Si single-photon avalanche diode detectors
| Autor: | Jaroslaw Kirdoda, Fiona Thorburn, Gerald S. Buller, Derek C. S. Dumas, Lourdes Ferre Llin, Douglas J. Paul, Kateryna Kuzmenko, Laura L. Huddleston, Ross W. Millar, Peter Vines, Zoe M. Greener |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Avalanche diode business.industry Detector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Photon counting 010309 optics Optics Planar Single-photon avalanche diode 0103 physical sciences 0210 nano-technology business Sensitivity (electronics) Noise-equivalent power Order of magnitude |
| ISSN: | 0146-9592 |
| Popis: | The performance of planar geometry Ge-on-Si single-photon avalanche diode detectors of 26 µ m diameter is presented. Record low dark count rates are observed, remaining less than 100 K counts per second at 6.6% excess bias and 125 K. Single-photon detection efficiencies are found to be up to 29.4%, and are shown to be temperature insensitive. These performance characteristics lead to a significantly reduced noise equivalent power (NEP) of 7.7 × 10 − 17 W H z − 1 2 compared to prior planar devices, and represent a two orders of magnitude reduction in NEP compared to previous Ge-on-Si mesa devices of a comparable diameter. Low jitter values of 134 ± 10 p s are demonstrated. |
| Databáze: | OpenAIRE |
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