Non-adiabatic pumping of single electrons affected by magnetic fields
Autor: | P. Mirovsky, Christoph Leicht, Thomas Weimann, Klaus Pierz, Bernd Kaestner, Vyacheslavs Kashcheyevs, H. W. Schumacher |
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Rok vydání: | 2010 |
Předmět: |
Physics
Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics FOS: Physical sciences Heterojunction 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnetic field Tunnel effect Quantum dot Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences 010306 general physics 0210 nano-technology Adiabatic process Quantum tunnelling Voltage |
Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 42:911-914 |
ISSN: | 1386-9477 |
DOI: | 10.1016/j.physe.2009.11.109 |
Popis: | Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pumping one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pumping characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pumping even or odd numbers of electrons is extracted. This article has been submitted to Physica E |
Databáze: | OpenAIRE |
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