Near-unity blue-orange dual-emitting Mn-doped perovskite nanocrystals with metal alloying for efficient white light-emitting diodes
| Autor: | Sheng Cao, Jialong Zhao, Jinju Zheng, Xi Yuan, Haibo Li, Wenyu Ji, Sihang Ji, Hanzhuang Zhang |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Photoluminescence Exciton Doping Analytical chemistry Quantum yield 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Biomaterials Colloid and Surface Chemistry Nanocrystal law 0210 nano-technology Luminous efficacy Perovskite (structure) Light-emitting diode |
| Zdroj: | Journal of colloid and interface science. 603 |
| ISSN: | 1095-7103 |
| Popis: | The tunable dual-color emitting Mn2+ doped CsPbCl3-xBrx nanocrystals (NCs) with near-unity photoluminescence quantum yield (PL QY) were synthesized through post-treatment of metal bromide at room temperature for fabrication of efficient warm white light-emitting diodes (WLEDs). Especially, the CdBr2 treated blue-orange emitting Mn doped NCs with various Mn/Pb molar feed ratios exhibit higher PL QY of 97% and longer Mn2+ PL lifetime of 0.9 ms. It is surprisingly found that the X-ray diffraction peak at 31.9° is almost not changed with increasing Br composition, meaning formation of metal alloying due to incorporation of amount of divalent cation in NCs. The strong and stable Mn2+ PL at temperature ranging from 80 K to 360 K are revealed and the temperature-dependent energy transfer efficiencies in Mn2+ doped CsPbCl1.5Br1.5 NCs are obtained. The enhancement mechanism of Mn2+ PL QY was attributed to improved energy transfer from exciton to Mn2+ d–d transition and suppressed defect state density after post-treatment. The efficient warm WLEDs with color rendering index of 90 and luminous efficacy of 92 lm/W at 10 mA were fabricated by combining blue-orange dual-emitting Mn2+ doped CsPbCl3-xBrx@SiO2 and green emissive CsPbBr3@SiO2 NCs with violet GaN chips. |
| Databáze: | OpenAIRE |
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