High-Aspect-Ratio and High-Flatness Cu3(SiGe) Nanoplatelets Prepared by Chemical Vapor Deposition
| Autor: | Radek Fajgar, Jan Šubrt, Filip Novotný, Vladislav Drinek, Mariana Klementová, Lukáš Palatinus |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Hybrid physical-chemical vapor deposition Biomedical Engineering Nanowire Bioengineering General Chemistry Surface finish Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Root mean square General Materials Science Nanorod Total pressure Composite material |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 13:4302-4310 |
| ISSN: | 1533-4880 |
| Popis: | Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy. |
| Databáze: | OpenAIRE |
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