Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration
| Autor: | P. Brianceau, M. Rommel, Hans-Jürgen Engelmann, M.-L. Pourteau, J. von Borany, F. Laulagnet, Guido Rademaker, J.-A. Dallery, Ahmed Gharbi, L. Baier, Karl-Heinz Heinig, Raluca Tiron |
|---|---|
| Přispěvatelé: | Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Vistec Electron Beam GmbH, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB), Fraunhofer (Fraunhofer-Gesellschaft), European Project: 688072,H2020,H2020-ICT-2015,IONS4SET(2016), Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Reactive ion etching
Materials science Fabrication lcsh:TK7800-8360 EFTEM 02 engineering and technology 01 natural sciences 010309 optics Single-electron transistor Characterization methods E-beam lithography Robustness (computer science) lcsh:Technology (General) Energy-filtered transmission electron microscopy 0103 physical sciences Electrical and Electronic Engineering Reactive-ion etching [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Lithography Nanopillar business.industry ICP-RIE lcsh:Electronics Single-electron-transistor 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Multilayer nanopillars CMOS lcsh:T1-995 Optoelectronics Si nanodots 0210 nano-technology business Silicon nanodots Critical dimension |
| Zdroj: | Micro and Nano Engineering Micro and Nano Engineering, Elsevier, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩ Micro and Nano Engineering, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩ Micro and Nano Engineering 9(2020), 100074 Micro and Nano Engineering, Vol 9, Iss, Pp 100074-(2020) |
| ISSN: | 2590-0072 |
| Popis: | International audience; SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the patterning of sub-20 nm Si Nano-Pillars (NP) with an embedded thin SiO2 layer. In this work, we report the patterning of such multi-layer isolated NP with e-beam lithography combined with a Reactive Ion Etching (RIE) process. The Critical Dimension (CD) uniformity and the robustness of the Process of Reference are evaluated. Characterization methods, either by CD-SEM for the CD, or by TEM cross-section for the NP profile, are compared and discussed. |
| Databáze: | OpenAIRE |
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