Electrical and optical characterization of a Zn-implanted InP laser annealed in a nitrogen atmosphere
| Autor: | G Leahu, G Zollo |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
Controlled atmosphere
Reflection high-energy electron diffraction Ion beam Absorption spectroscopy laser processing Annealing (metallurgy) Chemistry Carrier scattering optical and electronic properties Doping Analytical chemistry semiconductors Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Hall effect Materials Chemistry Electrical and Electronic Engineering |
| Popis: | Semi-insulating InP samples have been implanted with Zn in order to obtain p-type films. The implanted samples have been annealed by low-power pulsed-laser annealing in a N2 controlled atmosphere and in a vacuum. The Hall resistance measurements show that remarkable conductivity is obtained only in the case where the annealing is performed in a N2 atmosphere. The measured carrier activation energy evidences that the conduction is indeed due to the ionization of the implanted Zn atoms. Moreover, the mobility temperature behaviour has been used to evidence the carrier scattering mechanisms in the implanted and annealed layer. Lastly, the optical absorption coefficient of these samples has been measured by means of the photo-thermal deflection absorption technique in order to evidence the modification on the optical properties induced by the ion beam and laser irradiation. |
| Databáze: | OpenAIRE |
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