Modifying electronic properties of interfaces in high-Tc superconductors by doping
| Autor: | R. R. Schulz, Christof W. Schneider, Jochen Mannhart, Hans Hilgenkamp, H. Bielefeldt, B. Goetz, A. Schmehl |
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| Rok vydání: | 1999 |
| Předmět: |
Superconductivity
Materials science Condensed matter physics business.industry Doping Energy Engineering and Power Technology Electronic structure Condensed Matter Physics Space charge Electronic Optical and Magnetic Materials Band bending Semiconductor Condensed Matter::Superconductivity Cuprate Grain boundary Electrical and Electronic Engineering business |
| Zdroj: | Physica C: Superconductivity. :7-11 |
| ISSN: | 0921-4534 |
| DOI: | 10.1016/s0921-4534(99)00417-7 |
| Popis: | The superconducting and normal-conducting transport properties of interfaces play an important role for numerous applications of high-Tc superconductors. For basic reasons, the physics of interfaces in high-Tc superconductors is considerably richer and more complex than that of interfaces in the conventional low-Tc superconductors. Besides the unconventional order parameter symmetry of the high-Tc cuprates, as described previously, another difference originates from the possibility of significant band-bending in the high-Tc superconductors, leading to the formation of space-charge layers with modified electronic properties near the interfaces. In analogy with semiconductors, the space-charge layers in the high-Tc cuprates can be altered by doping the material or by the application of electrostatic fields, enabling a controlled modification of the transport properties of the interfaces. |
| Databáze: | OpenAIRE |
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