Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
| Autor: | Chih-Fang Huang, Kung-Yen Lee, Chia-Yuan Chen, Yun-Kai Lai, Shin-Yi Huang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
4H-SiC superjunction 02 engineering and technology Epitaxy 01 natural sciences Article breakdown voltage chemistry.chemical_compound MOSFET silicon carbide 0103 physical sciences TJ1-1570 0202 electrical engineering electronic engineering information engineering Silicon carbide Breakdown voltage Figure of merit Mechanical engineering and machinery Electrical and Electronic Engineering 010302 applied physics business.industry Mechanical Engineering 020208 electrical & electronic engineering specific on-resistance Power (physics) chemistry Control and Systems Engineering Optoelectronics business Technology CAD |
| Zdroj: | Micromachines Volume 12 Issue 7 Micromachines, Vol 12, Iss 756, p 756 (2021) |
| ISSN: | 2072-666X |
| DOI: | 10.3390/mi12070756 |
| Popis: | This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and static characteristics of the traditional vertical MOSFET, DC-FSJ MOSFET has a higher breakdown voltage (BV) and lower forward specific on-resistance (Ron,sp). The DC-FSJ MOSFET is formed by multiple epitaxial technology to create a floating P-type structure in the epitaxial layer. Then, a current spreading layer (CSL) is added to reduce the Ron,sp. The floating P-type structure depth, epitaxial layer concentration and thickness are optimized in this research. This structure can not only achieve a breakdown voltage over 3300 V, but also reduce Ron,sp. Under the same conditions, the Baliga Figure of Merit (BFOM) of DC-FSJ MOSFET increases by 27% compared with the traditional vertical MOSFET. Ron,sp is 25% less than that of the traditional vertical MOSFET. |
| Databáze: | OpenAIRE |
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