High brightness tapered lasers at 732 nm and 975 nm: Experiments and numerical analysis

Autor: G. Erbert, L. Borruel, P. Moreno, Bernd Sumpf, Michel Krakowski, Michel Calligaro, Eric C. Larkins, Trevor M. Benson, Hans Wenzel, Ignacio Esquivias, D. Rodriguez, Phillip Sewell, J. Wykes, S.C. Auzanneau, Slawomir Sujecki
Předmět:
Zdroj: Scopus-Elsevier
Popis: The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.
Databáze: OpenAIRE