Autor: |
G. Erbert, L. Borruel, P. Moreno, Bernd Sumpf, Michel Krakowski, Michel Calligaro, Eric C. Larkins, Trevor M. Benson, Hans Wenzel, Ignacio Esquivias, D. Rodriguez, Phillip Sewell, J. Wykes, S.C. Auzanneau, Slawomir Sujecki |
Předmět: |
|
Zdroj: |
Scopus-Elsevier |
Popis: |
The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|