An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology
| Autor: | Sander M. Smits, Y. Giomataris, H. van der Graaf, Jurriaan Schmitz, M. Chefdeville, Jan Visschers, Erik H.M. Heijne, P. Colas, S. van der Putten, J. Timmermans, Cora Salm |
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| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Nuclear and High Energy Physics
Electron gas multiplication Silicon Physics::Instrumentation and Detectors Microsensors chemistry.chemical_element Wafer-scale integration Embedded Wafer Level Ball Grid Array Hardware_INTEGRATEDCIRCUITS SC-RID: Radiation Imaging detectors Wafer Detectors and Experimental Techniques Instrumentation Computer Science::Distributed Parallel and Cluster Computing Physics business.industry Wafer post-processing Terms—Electron gas multiplication MicroMegas detector SC-CICC: Characterization of IC Components Grid 22/4 OA procedure SU-8 Anode Computer Science::Other CMOS chemistry Integrated grid Microelectrode MICROMEGAS Optoelectronics business Microelectrodes |
| Zdroj: | Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005, 139-142 STARTPAGE=139;ENDPAGE=142;TITLE=Proceedings 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 Nuclear instruments & methods in physics research. Section A : Accelerators, spectrometers, detectors and associated equipment, 556(2):10.1016/j.nima.2005.11.065, 490-494. Elsevier |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2005.11.065, |
| Popis: | A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 \mum by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs : primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors. |
| Databáze: | OpenAIRE |
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