Lattice sites of ion implanted Li in indium antimonide

Autor:	Ulrich Wahl, Ekkehard Recknagel, Carsten Ronning, S.G. Jahn, M. Restle, Hans Hofsäss
Rok vydání:	1994
Předmět:	Nuclear and High Energy Physics Materials science business.industry Indium antimonide Analytical chemistry Dissociation (chemistry) Ion chemistry.chemical_compound Semiconductor chemistry Interstitial defect Vacancy defect Radiation damage Atomic physics business Instrumentation Radioactive decay
Zdroj:	Scopus-Elsevier CIÊNCIAVITAE
ISSN:	0168-583X
DOI:	10.1016/0168-583x(94)95865-3
Popis:	We have studied the interaction of Li and implantation defects using the emission channeling technique after implantation of 60 keV 8Li ions into n- and p-InSb. Emission channeling patterns of α-particles emitted in the nuclear decay of 8Li ( t 1 2 = 838 ms ) were measured for temperatures between 50 and 600 K. A quantitative determination of Li site fractions was achieved by comparing the experimentally observed channeling and blocking patterns to calculated emission channeling effects from Monte Carlo simulations. Below 130 K about 60% of the Li atoms occupy tetrahedral interstitial sites. Between 130 and 200 K a site change to substitutional sites is observed for p-InSb as well as n-InSb, resulting in substitutional fractions of Li of about 60–70%. Substitutional Li is stable up to about 425 K in p-InSb and 475 K in n-InSb. From these temperatures we have estimated dissociation energies of 1.1 and 1.2 eV, respectively. For higher temperatures out-diffusion of Li to the surface is observed. The behavior of Li in InSb was found to be similar to the other III–V semiconductors GaAs, GaP and InP. Whether diffusion of Li or the mobilization of vacancy defects is the dominant process responsible for the observed lattice site changes is discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ecd64c8b0235967955565947b15bcb1 https://doi.org/10.1016/0168-583x(94)95865-3 Zobrazit plný text záznamu