Dicing of Thin Si Wafers with a Picosecond Laser Ablation Process
Autor: | Jens Holtkamp, Arnold Gillner, Christian Fornaroli |
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Přispěvatelé: | Publica |
Rok vydání: | 2013 |
Předmět: |
Yield (engineering)
Materials science medicine.medical_treatment Singulation Physics and Astronomy(all) Edge (geometry) Die (integrated circuit) law.invention picosecond Laser law medicine Wafer Dicing business.industry Transistor Nanosecond Ablation Laser Cutting UKP visual_art Picosecond Electronic component visual_art.visual_art_medium Optoelectronics Wafer dicing Si Wafer business Light-emitting diode |
Zdroj: | Physics Procedia. 41:603-609 |
ISSN: | 1875-3892 |
DOI: | 10.1016/j.phpro.2013.03.122 |
Popis: | In this paper an ablation cutting process of thin Si wafers with an ultra-short pulsed laser system (5 ps) is investigated in order to optimize specific process parameters. In contrast to state-of-the-art technologies like blade sawing and nanosecond-based laser processes, laser dicing with picosecond lasers offers fundamental advantages. Due to the short interaction time between laser and material, small kerf widths, marginal heat affected zones and minimal edge damaging are attainable. While a reduction of the kerf width leads to a higher yield per wafer, minimal thermal and mechanical damage increases the breaking strength of each die.In this paper an ablation cutting process of thin Si wafers with an ultra-short pulsed laser system (5 ps) is investigated in order to optimize specific process parameters. In contrast to state-of-the-art technologies like blade sawing and nanosecond-based laser processes, laser dicing with picosecond lasers offers fundamental advantages. Due to the short interaction time between laser and material, small kerf widths, marginal heat affected zones and minimal edge damaging are attainable. While a reduction of the kerf width leads to a higher yield per wafer, minimal thermal and mechanical damage increases the breaking strength of each die. |
Databáze: | OpenAIRE |
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