| Autor: |
A. S. Jevtic, Marko Andjelkovic, Srboljub Stanković, Alberto J. Palma, S. Dimitrijevic, Stefan Ilić, Sandra Veljković, Goran S. Ristić |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE 32nd International Conference on Microelectronics (MIEL) |
| Popis: |
The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_{T})$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on $\Delta V_{T}$ is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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