Probing Magnetism in Insulating Cr2Ge2Te6 by Induced Anomalous Hall Effect in Pt
Autor: | Mark Lohmann, Yong-Tao Cui, Wei Han, Mohammed Aldosary, Jiangnan Zhong, Wenyu Xing, Shuang Jia, Tang Su, Ruqian Wu, Yusheng Hou, Ben Niu, Jing Shi, Mohammed Alghamdi |
---|---|
Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Materials science
Magnetic domain Magnetism FOS: Physical sciences Bioengineering 02 engineering and technology anomalous Hall effect magnetic domains Magnetization Condensed Matter::Materials Science Hall effect cond-mat.mes-hall MD Multidisciplinary Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 2D magnets General Materials Science Nanoscience & Nanotechnology Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Mechanical Engineering induced ferromagnetism General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Hysteresis Ferromagnetism Curie temperature Magnetic force microscope 0210 nano-technology |
Zdroj: | Nano letters, vol 19, iss 4 |
Popis: | Two-dimensional ferromagnet Cr2Ge2Te6 (CGT) is so resistive below its Curie temperature that probing its magnetism by electrical transport becomes extremely difficult. By forming heterostructures with Pt, however, we observe clear anomalous Hall effect (AHE) in 5 nm thick Pt deposited on thin (< 50 nm) exfoliated flakes of CGT. The AHE hysteresis loops persist to ~ 60 K, which matches well to the Curie temperature of CGT obtained from the bulk magnetization measurements. The slanted AHE loops with a narrow opening indicate magnetic domain formation, which is confirmed by low-temperature magnetic force microscopy (MFM) imaging. These results clearly demonstrate that CGT imprints its magnetization in the AHE signal of the Pt layer. Density functional theory calculations of CGT/Pt heterostructures suggest that the induced ferromagnetism in Pt may be primarily responsible for the observed AHE. Our results establish a powerful way of investigating magnetism in 2D insulating ferromagnets which can potentially work for monolayer devices. |
Databáze: | OpenAIRE |
Externí odkaz: |