The Diagram of p–n Junction Formed on the n-GaAs Surface by 1.5 keV Ar+ Ion Beam
| Autor: | M. M. Brzhezinskaya, E. A. Makarevskaya, A. P. Solonitsyna, V. M. Mikoushkin |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Ion beam Photoemission spectroscopy GaAs p n junction band structure ion irradiation Ar ion beam 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion X-ray photoelectron spectroscopy 0103 physical sciences Band diagram Surface layer 0210 nano-technology p–n junction Electronic band structure |
| Zdroj: | Semiconductors. 54:1702-1705 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The core-level and valence band electronic structure of the n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy after irradiation by an Ar+ ion beam with energy Ei = 1500 eV and fluence Q = 1 × 1015 ions/cm2. Conversion of the conductivity type of the surface layer and formation of a p–n structure have been observed. The p-surface layer thickness (d ~ 5.0 nm) and band structure were experimentally determined from the Ga3d photoelectron spectrum by separation and analysis of the low intense n-type bulk contribution from deeper layers. A band diagram of the p–n junction formed on the n-GaAs surface by Ar+ ion bombardment was reconstructed. The p–n junction proved to be unexpectedly narrow compared to the extended tail of the implanted ion depth distribution. |
| Databáze: | OpenAIRE |
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