Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry
| Autor: | J. Hallais, F. Hottier, G. Laurence |
|---|---|
| Rok vydání: | 1981 |
| Předmět: |
In situ
GaAs structure growth Materials science real time assessment Analytical chemistry heterostructure growth 02 engineering and technology GaAs Al 01 natural sciences Experimental data processing Gallium arsenide p n heterojunctions composition determination vapour phase ambient chemistry.chemical_compound transition width Ellipsometry Phase (matter) 0103 physical sciences Quantitative assessment MO VPE experimental system Growth rate 010302 applied physics vapour phase epitaxial growth physics computing Heterojunction aluminium compounds computer based ellipsometry 021001 nanoscience & nanotechnology gallium arsenide semiconductor growth metallorganic vapour phase epitaxy chemistry [PHYS.HIST]Physics [physics]/Physics archives III V semiconductors growth rate 0210 nano-technology ellipsometry |
| Zdroj: | Revue de Physique Appliquée Revue de Physique Appliquée, Société française de physique / EDP, 1981, 16 (10), pp.579-589. ⟨10.1051/rphysap:019810016010057900⟩ |
| ISSN: | 0035-1687 2777-3671 |
| DOI: | 10.1051/rphysap:019810016010057900 |
| Popis: | Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of GaAs-(Al, Ga)As structure growth : qualitative assessment in real-time and quantitative assessment (growth rate, composition determination and transition width) by experimental data processing after growth. |
| Databáze: | OpenAIRE |
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