Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction Induced by a Graphene Interlayer
| Autor: | Sung Chul Jung, Gahyun Choi, Kyuhyung Mo, Wonho Song, Hoon Hahn Yoon, Hu Young Jeong, Kibog Park, Junhyung Kim, Jong Hoon Lee |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Diffusion barrier Graphene Schottky barrier Schottky diode 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences law.invention Metal Condensed Matter::Materials Science Dipole law visual_art 0103 physical sciences visual_art.visual_art_medium Condensed Matter::Strongly Correlated Electrons General Materials Science Work function 0210 nano-technology |
| Zdroj: | ACS Applied Materials & Interfaces. 11:47182-47189 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | It is demonstrated that the electric dipole layer due to the overlapping of electron wave functions at the metal/graphene contact results in a negative Fermi-level pinning effect on the region of the GaAs surface with low interface-trap density in the metal/graphene/n-GaAs(001) junction. The graphene interlayer plays the role of a diffusion barrier, preventing the atomic intermixing at the interface and preserving the low interface-trap density region. The negative Fermi-level pinning effect is supported by the decrease of the Schottky barrier with the increase of the metal work function. Our work shows that the graphene interlayer can invert the effective work function of the metal between high and low, making it possible to form both Schottky and Ohmic-like contacts with identical (particularly high work function) metal electrodes on a semiconductor substrate possessing low surface-state density. |
| Databáze: | OpenAIRE |
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