Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications

Autor:	Andreas Stoehr, Franz-Josef Tegude, Werner Prost, A. Poloczek, S. Fedderwitz, M. Weiss, Dieter Jaeger
Jazyk:	angličtina
Rok vydání:	2007
Předmět:	Materials science Silicon business.industry PIN diode chemistry.chemical_element Photodetector Substrate (electronics) Gallium arsenide Lattice mismatch law.invention chemistry.chemical_compound chemistry Gigabit law Bit error rate Optoelectronics business Elektrotechnik
Popis:	An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.
Databáze:	OpenAIRE
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