Landau assisted vertical transport in MQW p-i-n GaAs/AlGaAs diodes
| Autor: | Robin J. Nicholas, Siu Ling Wong, R. J. Stone, C. T. Foxon, J.G. Michels, A. M. Fox |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Condensed matter physics
Photoconductivity Surfaces and Interfaces Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Surfaces Coatings and Films Gallium arsenide Magnetic field chemistry.chemical_compound Magnetic Phenomena chemistry Materials Chemistry Quantum well Quantum tunnelling Diode |
| Zdroj: | ResearcherID |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(96)00382-2 |
| Popis: | We report studies of sequential resonant tunnelling in GaAs/AlGaAs multi-quantum well p-i-n structures in the presence of parallel magnetic fields up to 15 T. New features are observed which are attributed to inter-Landau level resonances involving a change of Landau index of +1 and +2. In one of the samples the tunnelling resonances saturate and shift with the magnetic field. This result may be related to the similar effects observed in coupled two-dimensional electron gases at high magnetic fields. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect