Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors
| Autor: | Tae Il Lee, Jin Young Oh, Sang Wook Jung, Soo Sang Chae, Suk Ho Bhang, Hong Koo Baik, Jee Ho Park |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Oxide Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Soft lithography law.invention Release agent chemistry.chemical_compound chemistry Thin-film transistor law 0103 physical sciences General Materials Science Photolithography 0210 nano-technology Contact print Ohmic contact Layer (electronics) |
| Zdroj: | ACS Applied Materials & Interfaces. 8:7205-7211 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.5b10847 |
| Popis: | We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography. |
| Databáze: | OpenAIRE |
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