Growth of InGaAsP/InP-laser structures monitored by using RAS techniques

Autor:	J.-T. Zettler, B. Henninger, W. Ebert, E. Steimetz, P. Wolfram
Přispěvatelé:	Publica
Rok vydání:	2003
Předmět:	Chemistry Doping Analytical chemistry Condensed Matter Physics Laser Semiconductor laser theory law.invention Inorganic Chemistry law Materials Chemistry Atomic ratio Metalorganic vapour phase epitaxy Thin film Spectroscopy Quantum well
Zdroj:	Journal of Crystal Growth. 248:240-243
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(02)01858-4
Popis:	Reflectance and reflectance anisotropy spectroscopy (RAS) was applied to monitor the MOVPE growth of InGaAsP/InP layers in situ. The basic relationship between the measured optical in situ data and n(Si)- and p(Zn)-doping concentrations of InP, InGaAs and InGaAsP were investigated. Among these materials, InP showed the lowest doping detection limit. Changes in the composition of InGaAsP could be resolved by RAS and reflectance measurements even in the range of a few atomic percent. Combining reflectance and RAS, characteristic fingerprints of all growth steps of a complete 1.3mum MQW laser structure were generated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cb73474b840f534694940163feb34d2 https://doi.org/10.1016/s0022-0248(02)01858-4 Zobrazit plný text záznamu Full Text from ScienceDirect