Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating

Autor:	Min-Kyu Joo, Dongseok Suh, Joonggyu Kim, Junhong Na
Rok vydání:	2019
Předmět:	Materials science Fabrication business.industry Graphene Transistor Noise (electronics) law.invention Magnetic field chemistry.chemical_compound chemistry law Ionic liquid Optoelectronics General Materials Science business Low voltage Voltage
Zdroj:	ACS Applied Materials & Interfaces. 11:4226-4232
ISSN:	1944-8252 1944-8244
Popis:	The advanced Hall magnetic sensor using an ion-gated graphene field-effect transistor demonstrates a high current-normalized sensitivity larger than 3000 V/AT and low operation voltages smaller than 0.5 V. From commercially available graphene-on-SiO2 wafers, large-area arrays of ion-gated graphene Hall element (ig-GHE) samples are prepared through complementary metal-oxide-semiconductor-compatible fabrication processes except the final addition of ionic liquid electrolyte covering the exposed graphene channel and the separate gate-electrode area. The enhanced carrier tunability by ionic gating enables this ig-GHE device to be extremely sensitive to magnetic fields in low-voltage-operation regimes. Further electrical characterization indicates that the operation window is limited by the nonuniform carrier concentration over the channel under high bias conditions. The drain-current-normalized magnetic resolution of the device measured using the low-frequency noise technique is comparable to the previously reported values despite its significant low power consumption.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c5e324d8efcf13b16f8dbf4204ded3b https://doi.org/10.1021/acsami.8b17869 Zobrazit plný text záznamu