Fabrication of Schottky diodes for terahertz imaging
| Autor: | Ennio Giovine, R. Casini, Andrea Notargiacomo, Vittorio Foglietti, D. Dominijanni, Michele Ortolani |
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| Rok vydání: | 2011 |
| Předmět: |
EBL
Materials science Fabrication Terahertz radiation business.industry Schottky barrier Schottky diode Condensed Matter Physics Diffusion capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resist T-gate Air-bridge Optoelectronics Electrical and Electronic Engineering business Lithography THz detector Diode |
| Zdroj: | Microelectronic engineering 88 (2011): 2544–2546. doi:10.1016/j.mee.2011.02.107 info:cnr-pdr/source/autori:E. Giovine, R. Casini, D. Dominijanni, A. Notargiacomo, M. Ortolani, V. Foglietti/titolo:Fabrication of Schottky diodes for terahertz imaging/doi:10.1016%2Fj.mee.2011.02.107/rivista:Microelectronic engineering/anno:2011/pagina_da:2544/pagina_a:2546/intervallo_pagine:2544–2546/volume:88 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.02.107 |
| Popis: | In this paper we present design, fabrication and characterization of Schottky terahertz diodes. The diode is based on a Ti/n-GaAs junction with very low junction capacitance. T-gate technology, based on trilayer of electronic resists and electron-beam lithography, and air-bridge technique have been used to obtain Schottky diodes with cutoff frequency in the THz range. The device fabrication process is fully planar and suitable for integration in monolithic arrays for active spectroscopic imaging. |
| Databáze: | OpenAIRE |
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