High-quality and homogeneous 200-mm GeOI wafers processed for high strain induction in Ge
| Autor: | J.M. Hartmann, T. Zabel, Ivan Duchemin, A. Chelnokov, Jérôme Faist, Yann-Michel Niquet, Hans Sigg, François Rieutord, Kevin Guilloy, J. Rothman, Alban Gassenq, J. Widiez, D. Rouchon, Samuel Tardif, V. Reboud, Mathieu Bertrand, Nicolas Pauc, V. Calvo |
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| Přispěvatelé: | Silicon Nanoelectronics Photonics and Structures (SiNaps), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Laboratory of Atomistic Simulation (LSIM ), Institute for Quantum Electronics, ETH Zürich (ETH Zürich), Paul Scherrer Institute (PSI) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Photoluminescence photonics chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences 7. Clean energy Stress (mechanics) [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph] symbols.namesake strain GeOI 0103 physical sciences Microelectronics Wafer Raman ComputingMilieux_MISCELLANEOUS 010302 applied physics business.industry Doping 021001 nanoscience & nanotechnology [PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph] chemistry micro-diffraction micro-bridges symbols [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics Light emission processing 0210 nano-technology business Raman spectroscopy |
| Zdroj: | SILICON PHOTONICS XII SILICON PHOTONICS XII, Jan 2017, SAN FRANCISCO, United States. ⟨10.1117/12.2251790⟩ |
| Popis: | The realization of efficient laser sources compatible with the microelectronics industry is currently one of the main challenges for silicon photonics. As Ge is CMOS compatible, the interest of using tensile strain or n-type doping to improve its light emission properties has significantly increased over the last few years. Theoretically, it has been predicted that the Ge bandgap becomes direct at around 4% strain for uniaxial tensile stress or 2% strain for bi-axial tensile stress. Several methods to induce such extreme levels of strain are currently investigated. The highest value of strain has been reached with Ge micro-bridges fabricated from Ge-On-Insulator (GeOI) substrates in a controllable and reproducible way. In this work we have first of all investigated the material properties of 200-mm GeOI wafers. Very high crystallographic quality is demonstrated at the micron-scale using Raman spectroscopy and synchrotron based Laue micro-diffraction performed at BM32-ESRF. We give then optimized designs of micro-bridge by comparing suspended and landed micro-bridges on different materials. We theoretically show that the thermal management is strongly improved in landed micro-bridges. Finally, we have developed specific processing for landing Ge micro-bridges on Si or SiO2, the photoluminescence measurements performed on landed micro-bridges shows an improvement of the Ge light emission with strain. |
| Databáze: | OpenAIRE |
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