Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration
| Autor: | Damon B. Farmer, Ralph Krupke, Mark C. Hersam, Jaione Tirapu Azpiroz, Phaedon Avouris, Michael Engel, Joohoon Kang, Jung Woo T. Seo, Mathias Steiner |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Technology
Materials science Semiconductor device fabrication Science General Physics and Astronomy FOS: Physical sciences Nanotechnology 02 engineering and technology Substrate (printing) Applied Physics (physics.app-ph) 010402 general chemistry 01 natural sciences Article General Biochemistry Genetics and Molecular Biology Nanomaterials law.invention law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Hardware_INTEGRATEDCIRCUITS Deposition (phase transition) lcsh:Science Nanoscopic scale Multidisciplinary Condensed Matter - Mesoscale and Nanoscale Physics business.industry Graphene Scale (chemistry) Physics - Applied Physics General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Semiconductor lcsh:Q 0210 nano-technology business ddc:600 |
| Zdroj: | Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018) Nature Communications Nature Communications, 9 (1), Article number: 4095 |
| ISSN: | 2041-1723 |
| DOI: | 10.1038/s41467-018-06604-4 |
| Popis: | Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-field assisted placement techniques eliminates the element of chemical treatment; however, it requires an incorporation of conductive placement electrodes that limit the performance, scaling, and density of integrated electronic devices. Here, we report a method for electric-field assisted placement of solution-processed nanomaterials by using large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, then are removed without residue once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas larger than 1mm2. In order to demonstrate the broad applicability, we have assembled representative zero-, one-, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. This graphene-based placement technique affords nanoscale resolution at wafer scale, and could enable mass manufacturing of nanoelectronics and optoelectronics involving a wide range of nanomaterials prepared via solution-based approaches. Comment: 17 pages, 5 figures |
| Databáze: | OpenAIRE |
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