Electrothermal Modeling, Simulation, and Electromagnetic Characterization of a 3.3 kV SiC MOSFET Power Module
| Autor: | Ciro Scognamillo, Antonio Pio Catalano, Andrea Irace, A. Borghese, G. Breglio, Vincenzo d'Alessandro, Alberto Castellazzi, Ravi Nath Tripathi, Michele Riccio, Lorenzo Codecasa |
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| Přispěvatelé: | Scognamillo, Ciro, Catalano, ANTONIO PIO, Borghese, Alessandro, Riccio, Michele, D'Alessandro, Vincenzo, Breglio, Giovanni, Irace, Andrea, Tripathi, Ravi N., Castellazzi, Alberto, Codecasa, Lorenzo |
| Rok vydání: | 2021 |
| Předmět: |
power module
010302 applied physics Materials science Electromagnetic characterization Thermal resistance 020208 electrical & electronic engineering Design flow Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences Modeling and simulation chemistry.chemical_compound Nonlinear system chemistry electrothermal simulations Power module 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Silicon carbide SiC MOSFETs Parasitic extraction |
| Zdroj: | 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | This paper presents the modeling of the electrothermal and electromagnetic behavior in SiC-based multi-chip power modules. The proposed approach is based on a macromodeling technique and is applied to a realistic case-study. Preliminarily, the assembly under analysis was experimentally characterized to estimate its parasitics due to electromagnetic interactions. Extremely fast and efficient electrothermal simulations were then performed in a SPICE-like environment. Parasitics and nonlinear thermal effects were accounted for in simulations at high switching frequencies. Results demonstrate that such an approach can be successfully adopted in the design flow of power modules in any device technology. |
| Databáze: | OpenAIRE |
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