Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation
| Autor: | Enrique Diez, Jaime Calvo-Gallego, J. E. Velazquez, Yahya Moubarak Meziani, Elham Javadi, J. A. Delgado Notario, Kristel Fobelets |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Terahertz radiation business.industry Detector Strained silicon 02 engineering and technology 021001 nanoscience & nanotechnology Polarization (waves) 01 natural sciences Signal Electronic Optical and Magnetic Materials Threshold voltage Responsivity Optics Hardware and Architecture 0103 physical sciences Optoelectronics Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | ResearcherID |
| DOI: | 10.1142/9789813223288_0010 |
| Popis: | We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of the photoresponse signal was observed around the threshold voltage. Results from numerical simulations based on synopsys TCAD are in agreement with experimental ones. The NEP and Responsivity were calculated from the photoreponse signal obtained experimentally. Those values are competitive with the commercial ones. A maximum of photoresponse was obtained (for all devices) when the polarization of the incident terahertz radiations was in parallel with the fingers of the gate pads. For applications, the device was used as a sensor within a terahertz imaging system and its ability for inspection of hidden objects was demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|