Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure
| Autor: | Doniyor Babajanov, Ibrohim Sapaev |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Photodetector defect-impurity complexes Condensed Matter::Mesoscopic Systems and Quantum Hall Effect current-voltage Atomic and Molecular Physics and Optics lcsh:QC1-999 Electronic Optical and Magnetic Materials Current voltage injection bipolar drift length Optoelectronics Electrical and Electronic Engineering business lcsh:Physics bipolar diffusion length |
| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 2, Pp 188-192 (2019) |
| ISSN: | 1605-6582 1560-8034 |
| Popis: | The current-voltage characteristic of an injection photodiode of the In–n-CdS– p-Si–In structure, which can operate in a wide spectral range of electromagnetic radiation at room temperature, has been investigated. It is found that the current-voltage characteristic of such structures has a power-law dependence of the current on the voltage. It is shown that in the area of the sharp increase in current of the current-voltage characteristics, participation of defect-impurity complexes in recombination processes becomes decisive. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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