Native and radiation induced defects in lattice mismatched InGaAs and InGaP

Autor:	M. Kaneiwa, Takaaki Agui, K. Kamimura, Hisayoshi Itoh, T. Sasaki, H.S. Lee, Takeshi Ohshima, N.J. Ekins-Daukes, Aurangzeb Khan, Masafumi Yamaguchi, Tatsuya Takamoto, K. Arafune, M. lmaizumi
Rok vydání:	2005
Předmět:	Materials science Deep-level transient spectroscopy business.industry Open-circuit voltage Annealing (metallurgy) Radiation induced Crystallographic defect Gallium arsenide chemistry.chemical_compound chemistry Lattice (order) Electron beam processing Optoelectronics business
Zdroj:	Scopus-Elsevier
DOI:	10.1109/pvsc.2005.1488223
Popis:	The native and radiation induced defects in lattice mismatched In/sub 0.16/GaAs and In/sub 0.56/Ga/sub 0.44/P are investigated. Subjecting lattice mismatched In/sub 0.16/GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from deep level transient spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1 MeV electron irradiation is presented and compared to data from lattice mismatched In/sub 0.56/Ga/sub 0.44/P devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b86e6e320957f230cc3c3e58d4a9b2d https://doi.org/10.1109/pvsc.2005.1488223 Zobrazit plný text záznamu