Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy

Autor:	Sota Ukai, C. Kochi, Yusuke Hattori, Kazuyuki Shichi, Misaki Hanaoka, Toyoaki Suzuki, Shinki Oyabu, Takehiko Wada, Koichi Nagase, Shunsuke Baba, Mitsuyoshi Yamagishi, Hidehiro Kaneda, Kentaroh Watanabe
Jazyk:	angličtina
Rok vydání:	2016
Předmět:	Cryostat Materials science Physics::Instrumentation and Detectors Wafer bonding Astrophysics::Cosmology and Extragalactic Astrophysics 02 engineering and technology Far-infrared astronomy Far-infrared detector 01 natural sciences Responsivity Optics Readout integrated circuit Blocked-Impurity-Band detector 0103 physical sciences General Materials Science Black-body radiation 010302 applied physics business.industry Detector Instrument 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Wavelength Optoelectronics 0210 nano-technology business Ge photoconductor
Zdroj:	Journal of Low Temperature Physics. 184(1):225-230
ISSN:	0022-2291
Popis:	著者人数: 13名 Accepted: 2016-01-04 資料番号: SA1150326000
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b797dcedb1a7fea3aa98ba7e0922dee http://id.nii.ac.jp/1696/00028998/ Zobrazit plný text záznamu Plný text ve formátu PDF