Improved thermal management of InP transistors in transferred‐substrate technology with diamond heat‐spreading layer
| Autor: | Ksenia Nosaeva, Wilfred John, W. Heinrich, Matthias Rudolph, Nils Weimann, O. Krueger |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Thermal resistance Bipolar junction transistor Electrical engineering Diamond Substrate (electronics) engineering.material chemistry.chemical_compound chemistry Heat spreader Indium phosphide engineering Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit Elektrotechnik |
| Zdroj: | Electronics Letters. 51:1010-1012 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2015.1135 |
| Popis: | A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricated in a transferred-substrate technology is presented. A vapour-phase deposited diamond layer acting as a heat spreader is heterogeneously integrated into the vertical layer stack. It is observed that the diamond layer reduces the thermal resistance of a 0.8 × 5 µm2 single emitter–finger HBT by roughly 75% down to 1.1 K/mW which is, to the authors’ knowledge, the best value reported thus far for InP HBTs of comparable size. It is also the first demonstration of heterogeneous integration of diamond into an InP HBT monolithic microwave integrated circuit. |
| Databáze: | OpenAIRE |
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