Effects of Ambience on Thermal-Diffusion Type Ga-doping Process for ZnO Nanoparticles
| Autor: | Md Maruful Islam, Toshiyuki Yoshida, Yasuhisa Fujita |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Coatings; Volume 12; Issue 1; Pages: 57 Coatings, Vol 12, Iss 57, p 57 (2022) |
| ISSN: | 2079-6412 |
| DOI: | 10.3390/coatings12010057 |
| Popis: | Various annealing atmospheres were employed during our unique thermal-diffusion type Ga-doping process to investigate the surface, structural, optical, and electrical properties of Ga-doped zinc oxide (ZnO) nanoparticle (NP) layers. ZnO NPs were synthesized using an arc-discharge-mediated gas evaporation method, followed by Ga-doping under open-air, N2, O2, wet, and dry air atmospheric conditions at 800 °C to obtain the low resistive spray-coated NP layers. The I–V results revealed that the Ga-doped ZnO NP layer successfully reduced the sheet resistance in the open air (8.0 × 102 Ω/sq) and wet air atmosphere (8.8 × 102 Ω/sq) compared with un-doped ZnO (4.6 × 106 Ω/sq). Humidity plays a key role in the successful improvement of sheet resistance during Ga-doping. X-ray diffraction patterns demonstrated hexagonal wurtzite structures with increased crystallite sizes of 103 nm and 88 nm after doping in open air and wet air atmospheres, respectively. The red-shift of UV intensity indicates successful Ga-doping, and the atmospheric effects were confirmed through the analysis of the defect spectrum. Improved electrical conductivity was also confirmed using the thin-film-transistor-based structure. The current controllability by applying the gate electric-field was also confirmed, indicating the possibility of transistor channel application using the obtained ZnO NP layers. |
| Databáze: | OpenAIRE |
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