Direct ultrafast laser written C-band waveguide amplifier in Er-doped chalcogenide glass

Autor: Sundarrajan Asokan, Stephen J. Beecher, Tamilarasan Sabapathy, Arunbabu Ayiriveetil, Ajoy K. Kar
Rok vydání: 2012
Předmět:
Zdroj: Optical Materials Express. 2:1556
ISSN: 2159-3930
DOI: 10.1364/ome.2.001556
Popis: This paper reports the fabrication and characterization of an ultrafast laser written Er-doped chalcogenide glass buried waveguide amplifier; Er-doped GeGaS glass has been synthesized by the vacuum sealed melt quenching technique. Waveguides have been fabricated inside the 4 mm long sample by direct ultrafast laser writing. The total passive fiber-to-fiber insertion loss is 2.58 +/- 0.02 dB at 1600 nm, including a propagation loss of 1.6 +/- 0.3 dB. Active characterization shows a relative gain of 2.524 +/- 0.002 dB/cm and 1.359 +/- 0.005 dB/cm at 1541 nm and 1550 nm respectively, for a pump power of 500 mW at a wavelength of 980 nm. (C) 2012 Optical Society of America
Databáze: OpenAIRE