Performances of AlGaN/GaN HEMTs in Planar Technology
| Autor: | Werquin, M., Vellas, N., Guhel, Y., Ducatteau, D., Boudart, B., Pesant, J. C., Zahia BOUGRIOUA, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Jazyk: | italština |
| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Werquin, M. ; Vellas, N. ; Guhel, Y. ; Ducatteau, D. ; Boudart, B. ; Pesant, J.C. ; Bougrioua, Z. ; Germain, M. ; De Jaeger, J.C. ; Gaquière, C. (2004) Performances of AlGaN/GaN HEMTs in Planar Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam. Proceedings of the 12th European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2004 HAL |
| Popis: | The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate. These results are very promising because the devices have not been passivated, and no T gate has been achieved. Moreover, planar technology offers the advantage of a better reliability. At present time, it is the best power result obtained with an isolation by argon implantation. |
| Databáze: | OpenAIRE |
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