A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors
| Autor: | Christopher Joffe, Thomas Heckel, Holger Gerstner, Achim Endruschat, Christian Novak, Martin Marz |
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| Přispěvatelé: | Publica |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Transistor Spice Semiconductor device modeling Gallium nitride Hardware_PERFORMANCEANDRELIABILITY law.invention chemistry.chemical_compound chemistry law Lookup table Hardware_INTEGRATEDCIRCUITS Electronic engineering Field-effect transistor Electrical and Electronic Engineering Datasheet Voltage |
| Zdroj: | IEEE Transactions on Power Electronics. 34:9131-9145 |
| ISSN: | 1941-0107 0885-8993 |
| DOI: | 10.1109/tpel.2018.2889513 |
| Popis: | This paper presents a universal SPICE model for field-effect transistors, which is independent from technology and semiconductor material. The created behavioral simulation model is based on a set of collected measurement data. The temperature-dependent output characteristics are modeled using a hybrid approach consisting of lookup tables and analytical equations. This leads to fast simulation times and very high accuracy. The validity for the static temperature-dependent behavior of this approach is verified for one SiC and one GaN transistor using the respective datasheet curves. The transistors nonlinear capacitances are modeled in dependence of their inter-electrode voltages. In order to verify the validity in the dynamic range, the universal model is applied to a GaN high-electron-mobility transistor. Double pulse measurements are used for the dynamic validation at a characterized measurement test bench regarding its parasitic elements. Therewith a proper validation of the simulation model at switching transients as low as 5 ns is achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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