Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
Autor: | Daehwan Jung, Lorenzo Rovere, Gaudenzio Meneghesso, Fabio Samparisi, John E. Bowers, Matteo Meneghini, Justin Norman, Robert W. Herrick, Enrico Zanoni, Matteo Buffolo, Carlo De Santi |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Silicon business.industry Slope efficiency chemistry.chemical_element 02 engineering and technology Electroluminescence Epitaxy Laser Atomic and Molecular Physics and Optics law.invention 020210 optoelectronics & photonics chemistry Quantum dot laser law 0202 electrical engineering electronic engineering information engineering Optoelectronics Degradation (geology) Electrical and Electronic Engineering business Diode |
Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 26:1-8 |
ISSN: | 1558-4542 1077-260X |
Popis: | This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process. |
Databáze: | OpenAIRE |
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