Multicrystalline silicon wafers prepared from upgraded metallurgical feedstock
| Autor: | J. Degoulange, I. Périchaud, Santo Martinuzzi, Christian Trassy |
|---|---|
| Přispěvatelé: | Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Annealing (metallurgy) chemistry.chemical_element 02 engineering and technology Raw material 7. Clean energy 01 natural sciences chemistry.chemical_compound Aluminium 0103 physical sciences Wafer [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering ComputingMilieux_MISCELLANEOUS 010302 applied physics Dopant Renewable Energy Sustainability and the Environment Metallurgy Doping [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Silicon nitride 0210 nano-technology |
| Zdroj: | Solar Energy Materials and Solar Cells Solar Energy Materials and Solar Cells, Elsevier, 2008, 92 (10), pp.1269-1273 |
| ISSN: | 0927-0248 |
| Popis: | A solution to the problem of the shortage of silicon feedstock used to grow multicrystalline ingots can be the production of a feedstock obtained by the direct purification of upgraded metallurgical silicon by means of a plasma torch. It is found that the dopant concentrations in the material manufactured following this metallurgical route are in the 10 17 cm −3 range. Minority carrier diffusion lengths L n are close to 35 μm in the raw wafers and increases up to 120 μm after the wafers go through the standard processing steps needed to make solar cells: phosphorus diffusion, aluminium–silicon alloying and hydrogenation by deposition of a hydrogen-rich silicon nitride layer followed by an annealing. L n values are limited by the presence of residual metallic impurities, mainly slow diffusers like aluminium, and also by the high doping level. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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